Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Meng-Fu You

Chung-Min Fu

Lee-Chung Lu

Po-Hsiang Huang

Wen-Hao Chen

Yuan-Te Hou

Shen-Feng Chen

Kuen-Yu Tsai

Yi-Chang Lu

Cheng-Chieh Hsieh

Wen-Hao Cheng

William Wu Shen

Chi-Yeh Yu

Wan-Yu Lo

The present disclosure relates to a curve-fitting procedure for determining proximity effect device parameters in semiconductor fabrication. Methods presented herein are adapted to determine the impact of narrow width related effects on device characteristics by comparing two-dimensional (2D) and/or three-dimensional (3D) device simulations. Methods presented herein are adapted to determine the accuracy of conventional extraction methods utilizing non-rectangular gate device simulation.

Determining proximity effect parameters for non rectangular semiconductor structures

Among other things, techniques and systems for 3D modeling of a FinFET device and for detecting a variation for a design layout based upon a 3D FinFET model are provided. For example, a fin height of a FinFET device is determined based upon imagery of the FinFET device. The fin height and a 2D FinFET model for the FinFET device are used to create a 3D FinFET model. The 3D FinFET model takes into account the fin height, which is evaluated to identify fin height variations amongst FinFET devices within the design layout. For example, a fin height variation is determined based upon a proximity pattern density, a fin pitch, a gate length, or other parameters/measurements. A voltage threshold variation is determined based upon the fin height variation. This allows the design layout to be modified to decrease the variation.

3D device modeling for FinFET devices

A standard cell semiconductor integrated circuit device design provides a standard cell semiconductor device that includes first standard cells and user-defined target standard cells which consume more power or include other operational characteristics that differ from the operational characteristics of the first standard cells. The standard cells are routed to ground and power wires using one power rail and the target cells are routed to the ground and power lines using the first power rail and a second power rail to alleviate electromigration in either of the power rails. The two power rails include an upper power rail and a lower power rail. An intermediate conductive layer may be disposed between the upper and lower power rails to provide for signal routing by lateral interconnection between cells.

Electromigration resistant standard cell device

Embodiments of the present invention are a system, a computer program product, and a method for implementing an integrated circuit design. The method for implementing an integrated circuit design includes accessing an original electronic representation of an integrated circuit layout from a first user file, and accessing a defined sensitivity index that characterizes an impact of the dummy pattern on the functional component. The impact of the dummy pattern on the functional component is analyzed and it is determined whether the impact is within a limit of the sensitivity index. One of a plurality of features of the dummy pattern is adjusted if the impact is not within the limit to form a generated electronic representation of a modified integrated circuit layout, and the generated electronic representation is output to a second user file. The integrated circuit layout includes a dummy pattern and a functional component.

Dummy pattern performance aware analysis and implementation

The present disclosure relates to a curve-fitting procedure for determining proximity effect device parameters in semiconductor fabrication. Methods presented herein are adapted to determine the impact of narrow width related edge effects on device characteristics by comparing two-dimensional (2D) and/or three-dimensional (3D) device simulations. Methods presented herein are adapted to determine the accuracy of conventional extraction methods utilizing non-rectangular gate device simulation.

Determining proximity effect parameters for non-rectangular semiconductor structures

A method includes retrieving a first component information of a secured portion of a package, wherein the first component information is encrypted. The step of retrieving includes decrypting the first component information. A thermal resistance-network (R-network) is generated from the decrypted first component information. A temperature map of the package is generated using the thermal R-network and a second component information of an unsecured portion of the package, wherein the secured portion and the unsecured portion are bonded to each other.

Thermal analysis of integrated circuit packages

A computer implemented method comprises accessing a 3D-IC model stored in a tangible, non-transitory machine readable medium, inputting a power profile in a computer processor, generating a transient temperature profile based on the 3D-IC model, identifying a potential thermal violation at a corresponding operating time interval and a corresponding location of a plurality of points of the 3D-IC design, and outputting data representing the potential thermal violation. The 3D-IC model represents a 3D-IC design comprising a plurality of elements in a stack configuration. The power profile is applied to the plurality of elements of the 3D-IC design as a function of an operating time. The transient temperature profile includes temperatures at a plurality of points of the 3D-IC design as a function of an operating time.

Growing community of inventors

Changhua, Taiwan

Meng-Fu You