Company Filing History:

5 out of 821

Itt Corporation

patents

1 out of 1

Itt a Division of Itt Corporation Gallium Arsenide Technology Center

patent

1 out of 12

Itt Gallium Arsenide Technology Center, a Division of Itt Corporation

patents

4. 1 out of 3

Itt Gallium Arsenide Technology Center

patents

Years Active: 1988-1991

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8 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 4994868 - Heterojunction confined channel FET (1991-02-19),

2. 4965218 - Self-aligned gate realignment employing planarizing overetch (1990-10-23),

3. 4962050 - GaAs FET manufacturing process employing channel confining layers (1990-10-09),

4. 4948752 - Method of making sagfets on buffer layers (1990-08-14),

5. 4918493 - Sagfet with buffer layers (1990-04-17),

6. 4849376 - Self-aligned refractory gate process with self-limiting undercut of an (1989-07-18),

7. 4847212 - Self-aligned gate FET process using undercut etch mask (1989-07-11),

8. 4782032 - Method of making self-aligned GaAs devices having TiWN.sub.x (1988-11-01),

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