The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 1990
Filed:
Dec. 06, 1988
Applicant:
Inventors:
Arthur E Geissberger, Roanoke, VA (US);
Robert A Sadler, Roanoke, VA (US);
Gregory E Menk, Roanoke, VA (US);
Matthew L Balzan, Roanoke, VA (US);
Assignee:
ITT Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 22 ; 148D / ; 148D / ; 148D / ; 148D / ; 357 232 ; 357 15 ; 437 26 ; 437 29 ; 437 39 ; 437176 ; 437912 ;
Abstract
A high speed GaAs FET is provided by forming a sandwiched GaAs channel between AlGaAs layers and employing an Si implant to provide channel doping for the GaAs channel. The poor activation efficiency of Si in AlGaAs relative to its activation efficiency in GaAs provides a channel having a higher active dopant concentration than exists in the adjacent sandwiching layers. This tends to enhance conductivity in the channel relative to the sandwiching layers.