The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1988
Filed:
Jan. 12, 1987
Arthur E Geissberger, Roanoke, VA (US);
Robert A Sadler, Roanoke, VA (US);
Matthew L Balzan, Roanoke, VA (US);
ITT Gallium Arsenide Technology Center, a division of ITT Corporation, Roanoke, VA (US);
Abstract
A method of making a field-effect transistor includes performing a first ion implant in at least one region of a gallium arsenide substrate and forming a metallization layer of titanium-tungsten nitride on the implanted substrate. A metallic gold masking layer is deposited on the metallization layer over the implanted region and that portion of the metallization layer which is unmasked is removed. A self-aligned source of implantation ions is beamed into the first implanted region in those areas not covered by the masking layer. The substrate is then annealed to activate the implanted region with the gold masking layer remaining to greatly reduce the resistance of the gate electrode of said field-effect transistor.