This inventor holds 20 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Hitachi, Ltd., Hitachi Ulsi Systems Co., Ltd., Renesas Electronics Corporation. Active years: 1976-2016.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Hachioji, JA (1976)
- Hachioji, JP (1979 - 1991)
- Hachiouji, JP (1993 - 1994)
- Takasaki, JP (1997 - 2016)
Company Filing History:
8 out of 42,743 
4 out of 336 
4 out of 7,659 
Years Active: 1976-2016
Areas of Expertise:
Title: The Innovative Mind of Masayoshi Kobayashi
Introduction: Masayoshi Kobayashi, an esteemed inventor based in Takasaki, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 20 patents, he has been at the forefront of innovations that enhance the performance and efficiency of semiconductor devices.
Latest Patents: Among his latest inventions is a method of fabricating a semiconductor device featuring a Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET) with a trench gate structure. The method entails forming a trench from the major surface of a semiconductor layer of the first conductivity type, serving as a drain region. This is followed by creating a gate insulating film made from a thermal oxide film and a deposited film on the internal surface of the trench. Once a gate electrode is established, impurities are introduced into the semiconductor substrate to create a channel forming region, along with source region formation, thereby improving the semiconductor device's functionality.
Career Highlights: Masayoshi Kobayashi has had a distinguished career with reputable companies, notably Hitachi, Ltd. His work has played a crucial role in advancing semiconductor technology, leading to various patented innovations that address complex engineering challenges.
Collaborations: Throughout his career, Masayoshi collaborated with notable coworkers, including Sumito Numazawa and Yoshito Nakazawa. These partnerships have fostered a collaborative environment that has led to significant breakthroughs in semiconductor device fabrication.
Conclusion: Masayoshi Kobayashi stands as a prominent figure in the field of semiconductor innovation. With 20 patents to his name, he continues to push the boundaries of technology, contributing to advancements that shape the future of electronic devices. His work is a testament to the essential role inventors play in technology and industry, highlighting the importance of innovation in our rapidly evolving world.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile