The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Jul. 21, 2000
Sumito Numazawa, Takasaki, JP;
Yoshito Nakazawa, Takasaki, JP;
Masayoshi Kobayashi, Takasaki, JP;
Satoshi Kudo, Maebashi, JP;
Yasuo Imai, Takasaki, JP;
Sakae Kubo, Takasaki, JP;
Takashi Shigematsu, Takasaki, JP;
Akihiro Ohnishi, Isesaki, JP;
Kozo Uesawa, Tamamura-machi, JP;
Kentaro Oishi, Takasaki, JP;
Other;
Abstract
In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.