Takashi Shigematsu

Title: The Innovations of Takashi Shigematsu

Introduction

Takashi Shigematsu is a prominent inventor based in Takasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

One of his latest patents is a method of fabricating a semiconductor device featuring a Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET) with a trench gate structure. In this method, a trench is formed from the major surface of a semiconductor layer of first conductivity type, which serves as a drain region. A gate insulating film, including a thermal oxide film and a deposited film, is formed over the internal surface of the trench. After the formation of a gate electrode within the trench, impurities are introduced into the semiconductor substrate to create a channel forming region of second conductivity type. Additionally, impurities are introduced into this region to form a source region of first conductivity type.

Career Highlights

Throughout his career, Takashi Shigematsu has worked with notable companies, including Hitachi ULSI Systems Co., Ltd. His expertise in semiconductor technology has positioned him as a key figure in the industry.

Collaborations

He has collaborated with esteemed colleagues such as Sumito Numazawa and Yoshito Nakazawa, contributing to various innovative projects in semiconductor development.

Conclusion

Takashi Shigematsu's contributions to semiconductor technology through his patents and collaborations highlight his importance as an inventor in the field. His work continues to influence advancements in semiconductor devices.