Kozo Uesawa

Title: The Innovations of Kozo Uesawa

Introduction

Kozo Uesawa is a prominent inventor based in Sawa-gun, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

Uesawa's latest patents focus on methods of fabricating semiconductor devices, particularly those utilizing a Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET) with a trench gate structure. In these methods, a trench is formed from the major surface of a semiconductor layer of first conductivity type, which serves as a drain region. A gate insulating film, consisting of a thermal oxide film and a deposited film, is formed over the internal surface of the trench. After the formation of a gate electrode within the trench, impurities are introduced into the semiconductor substrate to create a channel forming region and a source region.

Career Highlights

Throughout his career, Uesawa has worked with notable companies, including Hitachi ULSI Systems Co., Ltd. His expertise in semiconductor technology has led to numerous innovations that have impacted the industry.

Collaborations

Uesawa has collaborated with several talented individuals, including Sumito Numazawa and Yoshito Nakazawa. These collaborations have contributed to the development of advanced semiconductor technologies.

Conclusion

Kozo Uesawa's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence the development of efficient and advanced semiconductor devices.