Company Filing History:
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Years Active: 2001-2016
Title: Akihiro Ohnishi: Innovator in Semiconductor Technology
Introduction
Akihiro Ohnishi is a prominent inventor based in Isesaki, Japan, known for his significant contributions to semiconductor technology. With a total of 11 patents to his name, Ohnishi has made remarkable advancements in the fabrication of semiconductor devices.
Latest Patents
One of his latest patents involves a method of fabricating a semiconductor device featuring a Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET) with a trench gate structure. In this method, a trench is formed from the major surface of a semiconductor layer of first conductivity type, which serves as a drain region. A gate insulating film, consisting of a thermal oxide film and a deposited film, is created over the internal surface of the trench. After forming a gate electrode within the trench, impurities are introduced into the semiconductor substrate to create a semiconductor region of second conductivity type, which serves as a channel forming region. Further, impurities are introduced into this region to form a source region of the first conductivity type.
Career Highlights
Throughout his career, Akihiro Ohnishi has worked with notable companies, including Hitachi ULSI Systems Co., Ltd. His expertise in semiconductor technology has positioned him as a key figure in the industry.
Collaborations
Ohnishi has collaborated with esteemed colleagues such as Sumito Numazawa and Yoshito Nakazawa, contributing to the advancement of semiconductor technologies through teamwork and shared knowledge.
Conclusion
Akihiro Ohnishi's innovative work in semiconductor device fabrication has significantly impacted the field, showcasing his dedication to advancing technology. His contributions continue to influence the industry and inspire future innovations.