Masaya Ohtsuka is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His innovative work has advanced the capabilities of semiconductor devices, making them more efficient and reliable.

Latest Patents

Ohtsuka's latest patents include a semiconductor device that features a region for substrate potential formed of an n-type well. This well is strategically positioned in relation to the gate electrode and is located between drain regions in the direction of the channel width. Additionally, he has developed a semiconductor device with a fuse, which incorporates various components such as a silicon fuse, silicon wires, and a guard ring, all designed to enhance the functionality and safety of semiconductor applications.

Career Highlights

Masaya Ohtsuka has built a successful career at Ricoh Company, Ltd., where he has been instrumental in driving innovation in semiconductor technology. His work has not only contributed to the company's success but has also had a lasting impact on the industry as a whole.

Collaborations

Ohtsuka has collaborated with notable colleagues, including Yoshinori Ueda and Masashi Oshima. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies in the semiconductor field.

Conclusion

Masaya Ohtsuka's contributions to semiconductor technology exemplify the spirit of innovation. His patents and collaborative efforts continue to shape the future of this critical industry.

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