The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2012

Filed:

Sep. 23, 2010
Applicants:

Masashi Oshima, Kanagawa, JP;

Masaya Ohtsuka, Hyogo, JP;

Inventors:

Masashi Oshima, Kanagawa, JP;

Masaya Ohtsuka, Hyogo, JP;

Assignee:

Ricoh Company, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a base insulating film on which a silicon fuse, silicon wiring patterns, and a silicon guard ring are formed. The silicon guard ring surrounds the silicon fuse and has silicon cutout parts so as not to contact the silicon wiring patterns. A via guard ring, which has via cutout parts located above the silicon cutout parts, is formed in an interlayer insulating film and on the silicon guard ring. A metal wiring guard ring is formed on the via guard ring and the interlayer insulating film. A silicon nitride film is formed on the interlayer insulating film so as to cover the metal wiring guard ring. An interface between the interlayer insulating film and the metal wiring guard ring at the via cutout parts is covered by the silicon nitride film.


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