The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Mar. 12, 2012
Applicant:
Masaya Ohtsuka, Kobe, JP;
Inventor:
Masaya Ohtsuka, Kobe, JP;
Assignee:
Ricoh Company, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 29/72 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); G05F 1/575 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7395 (2013.01); H01L 29/1087 (2013.01); H01L 29/78 (2013.01); H01L 29/7835 (2013.01); H01L 29/0692 (2013.01); G05F 1/575 (2013.01);
Abstract
A region for substrate potential is formed of an n-type well at a position in the direction of a channel length relative to the gate electrode and the position is between drain regions in the direction of a channel width. An n-type of a contact region with a higher concentration of n-type impurity than that of the region is provided in the region. The contact region is arranged away from the drain regions with a distance to obtain a desired breakdown voltage of PN-junction between the region and the drain region.