Kudamatsu, Japan

Masatoshi Oyama

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignees: Hitachi-High-Technologies Corporation, Hitachi, Ltd.. Active years: 2005-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masatoshi Oyama. Retrieved from https://idiyas.com/inventor/masatoshi-oyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

Average Co-Inventor Count = 2.8

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2005-2009

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3 patents (USPTO):Explore Patents

Title: Masatoshi Oyama: Innovator in Dry Etching Technology

Introduction

Masatoshi Oyama is a notable inventor based in Kudamatsu, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly in dry etching methods. With a total of 3 patents to his name, Oyama's work has advanced the precision and efficiency of surface processing techniques.

Latest Patents

One of Oyama's latest patents is a dry etching method of insulating film. This innovative technique aims to provide a high-precision method for forming deep holes of elliptic patterns. It improves hole directionality on the short diameter side, which can be compromised due to excessive polymer deposition during the initial etching stage. The method involves treating a workpiece with a mask of elliptic pattern using a fluorocarbon gas. The etching process is divided into two steps, with the first step focusing on polymer deposition at a lower rate than the second step, while controlling the step time based on the ellipticity of the pattern.

Another significant patent is for a specimen surface processing apparatus and surface processing method. This apparatus utilizes a mixed gas of a fluorine-containing gas and oxygen as an ashing gas. The method allows for simultaneous removal of silicon components left on the mask material surface and carbon-based deposits within a vacuum chamber. The removal process is conducted under low pressure, minimizing damage to the film layer after etching.

Career Highlights

Masatoshi Oyama has worked with prominent companies in the technology sector, including Hitachi High-Technologies Corporation and Hitachi, Ltd. His experience in these organizations has contributed to his expertise in semiconductor technologies and surface processing methods.

Collaborations

Throughout his career, Oyama has collaborated with notable colleagues such as Nobuyuki Negishi and Masahiro Sumiya. These partnerships have fostered innovation and development in the field of semiconductor manufacturing.

Conclusion

Masatoshi Oyama's contributions to dry etching technology have significantly impacted the semiconductor industry. His innovative patents and collaborations highlight his role as a leading inventor in this specialized field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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