The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Dec. 09, 2002
Koichi Nakaune, Kudamatsu, JP;
Masatoshi Oyama, Kudamatsu, JP;
Koichi Nakaune, Kudamatsu, JP;
Masatoshi Oyama, Kudamatsu, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A surface processing apparatus is provided. In the apparatus, an etching rate ratio of an organic material such as a BARC of anti-reflective film to a resist of mask forming a pattern, that is, a selective ratio is high, the anti-reflective film being a means for forming the pattern with a high accuracy in surface processing of a semiconductor. In the surface processing apparatus, which uses a plasma, a deposition gas is added to a light element of hydrogen as the etching gas. Ions accelerated by a bias electric power supply accelerate etching reaction. Sputtering at edges of the mask can be reduced by using the light element of hydrogen as the etching gas, and the selective ratio of the anti-reflective film to the masking material can be increased by mixing the deposition gas with the hydrogen.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile