The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
Sep. 14, 2005
Masatoshi Oyama, Kudamatsu, JP;
Yoshiyuki Ohta, Kudamatsu, JP;
Tsuyoshi Yoshida, Hikari, JP;
Hironobu Kawahara, Kudamatsu, JP;
Masatoshi Oyama, Kudamatsu, JP;
Yoshiyuki Ohta, Kudamatsu, JP;
Tsuyoshi Yoshida, Hikari, JP;
Hironobu Kawahara, Kudamatsu, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be carried out at the same time: removal of the silicon component left on the mask material surface and the mask material in the area including the cured mask layer and the like; and the removal of the carbon-based, and silicon-based deposits deposited on the inner wall of a vacuum chamber. In addition, the removal of the mask material is performed under low pressure, and in the subsequent step to a step using a mixed gas of a fluorine-containing gas and an oxygen gas, a plasma of only an oxygen gas is used. As a result, it becomes possible to reduce the damages (etching) to the film layer after etching.