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For the Inventor, By the Inventor

Kawasaki, Japan

Masato Matsumiya

This inventor holds 62 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Semiconductor Memory (CPC class 3652). Top assignees: Fujitsu Corporation, Fujitsu Semiconductor Limited, Fujitsu Microelectronics Limited. Active years: 1994-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masato Matsumiya. Retrieved from https://idiyas.com/inventor/masato-matsumiya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 62 

% Patents Active = 79.0

 

Average Co-Inventor Count = 3.7

ph-index = 14

Forward Citations = 624(Granted Patents)

Forward Citations (Not Self Cited) = 619(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kanagawa, JP (2003)
  • Kawasaki, JP (1994 - 2014)

Company Filing History:

goldMedal59 out of 39,374 
 
Fujitsu Corporation
 patents
silverMedal2 out of 1,674 
 
Fujitsu Semiconductor Limited
 patents
bronzeMedal1 out of 467 
 
Fujitsu Microelectronics Limited
 patents

Years Active: 1994-2014

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Areas of Expertise:
Multi-Port Memory
DRAM
Error Correction
SRAM Interface
Memory Cells
Redundancy Processing
Bus-Bandwidth
Sense Amplifiers
Sub-Select Lines
Circuit Device
Data Access
62 patents (USPTO):Explore Patents
1. 8687456 - Multi-port memory based on DRAM core (2014-04-01),
2. 7911825 - Multi-port memory based on DRAM core (2011-03-22),
3. 7706209 - Semiconductor memory device capable of driving non-selected word lines to a variable negative potential based on a bank access operation (2010-04-27),
4. 7459960 - Semiconductor integrated circuit device, and adjustment method of semiconductor integrated circuit device (2008-12-02),
5. 7325173 - Semiconductor memory having error correction (2008-01-29),
6. 7297996 - Semiconductor memory device for storing data in memory cells as complementary information (2007-11-20),
7. 7281155 - Semiconductor memory device and method for executing shift redundancy operation (2007-10-09),
8. 7152150 - DRAM having SRAM equivalent interface (2006-12-19),
9. 7120761 - Multi-port memory based on DRAM core (2006-10-10),
10. 7079443 - Semiconductor device (2006-07-18),
11. 7005693 - Semiconductor memory device for storing data in memory cells as complementary information (2006-02-28),
12. 6943616 - Semiconductor integrated circuit device, and adjustment method of semiconductor integrated circuit device (2005-09-13),
13. 6909644 - Semiconductor memory device (2005-06-21),
14. 6868023 - Semiconductor memory device based on dummy-cell method (2005-03-15),
15. 6853595 - Semiconductor memory device (2005-02-08),

Title: Masato Matsumiya: Innovating Semiconductor Memory Technology

Introduction: Masato Matsumiya, based in Kawasaki, Japan, is a prominent inventor with an impressive portfolio of 62 patents. His contributions primarily focus on advancements in semiconductor memory technology, showcasing his expertise and innovative spirit in the field.

Latest Patents: Matsumiya's latest work includes a revolutionary multi-port memory device based on DRAM core technology. This semiconductor memory device features multiple external ports, each capable of receiving commands, while its internal circuit performs multiple access operations within minimal time intervals of commands that are input into one of the external ports. This innovation significantly enhances the efficiency and performance of memory devices.

Career Highlights: Throughout his career, Matsumiya has made substantial contributions to major companies, including Fujitsu Corporation and Fujitsu Semiconductor Limited. His work in these organizations has played a pivotal role in developing cutting-edge technology solutions that drive the semiconductor industry forward.

Collaborations: Matsumiya has collaborated with notable professionals in the field, including Satoshi Eto and Masato Takita. These collaborations have allowed for the exchange of ideas and fostered an environment of innovation, contributing to the advancement of semiconductor technology.

Conclusion: Masato Matsumiya stands out as a leading inventor in semiconductor memory technology, with a remarkable number of patents that exemplify his innovation and dedication to the field. His work continues to influence the industry, paving the way for new technologies that enhance memory device efficiency and performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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