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For the Inventor, By the Inventor

Koganei, Japan

Masatada Horiuchi

This inventor holds 30 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Hitachi, Ltd., Hitachi Microcomputer Engineering, Ltd., Renesas Technology Corp.. Active years: 1976-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masatada Horiuchi. Retrieved from https://idiyas.com/inventor/masatada-horiuchi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30

% Patents Active = 83.3

Average Co-Inventor Count = 2.4

ph-index = 13

Forward Citations = 549(Granted Patents)


Location History:

  • Koganei, JA (1976)
  • Koganei, JP (1980 - 2006)

Company Filing History:

goldMedal27 out of 42,726 
 
Hitachi, Ltd.
 patents
silverMedal1 out of 149 
 
Hitachi Microcomputer Engineering, Ltd.
 patents
bronzeMedal1 out of 3,781 
 
Renesas Technology Corp.
 patents
4. 2 out of 834,453 
Other
 patents
where one patent can have more than one assignee

Years Active: 1976-2006

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Areas of Expertise:
Semiconductor Device
Integrated Circuit
Memory Technology
Field Effect Transistor
Bipolar Transistor
Manufacturing Method
Multi-Layered Structure
Solid-State Imaging
SOI Structure
Polycrystalline Silicon
Data Retention
Defect-Remediable Memory
30 patents (USPTO):Explore Patents
1. 7001818 - MIS semiconductor device and manufacturing method thereof (2006-02-21),
2. 6987983 - Radio frequency monolithic integrated circuit and method for manufacturing the same (2006-01-17),
3. 6800513 - Manufacturing semiconductor device including forming a buried gate covered by an insulative film and a channel layer (2004-10-05),
4. 6781202 - Semiconductor devices and their fabrication methods (2004-08-24),
5. 6744099 - MIS semiconductor device and manufacturing method thereof (2004-06-01),
6. 6730964 - Semiconductor device and method of producing the same (2004-05-04),
7. 6690060 - Field effect transistor and method of fabricating the same by controlling distribution condition of impurity region with implantation of additional ion (2004-02-10),
8. 6667199 - Semiconductor device having a replacement gate type field effect transistor and its manufacturing method (2003-12-23),
9. 6646296 - Semiconductor integrated circuit and method for manufacturing the same (2003-11-11),
10. 6538268 - Semiconductor device and method of producing the same (2003-03-25),
11. 6462364 - Semiconductor integrated circuit and method for manufacturing the same (2002-10-08),
12. 6329238 - Method of fabricating a memory device having a long data retention time with the increase in leakage current suppressed (2001-12-11),
13. 6313012 - Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator (2001-11-06),
14. 6157055 - Semiconductor memory device having a long data retention time with the (2000-12-05),
15. 6004865 - Method of fabricating multi-layered structure having single crystalline (1999-12-21),

Title: Masatada Horiuchi: Pioneering Inventor from Koganei, Japan

Introduction: Masatada Horiuchi is a renowned inventor hailing from Koganei, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Masatada Horiuchi holds several patents in the areas of robotics, artificial intelligence, and automation, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Horiuchi has worked with leading tech companies in Japan, spearheading projects that have revolutionized industries and improved efficiency through innovative solutions.

Collaborations: Throughout his career, Masatada Horiuchi has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of creativity and excellence in all his projects.

Conclusion: Masatada Horiuchi's passion for innovation and his relentless drive to create solutions that make a difference have solidified his position as a trailblazer in the world of technology, inspiring future generations of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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