The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2003
Filed:
Aug. 12, 2002
Applicant:
Inventor:
Masatada Horiuchi, Koganei, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
Abstract
A semiconductor integrated circuit has a MOS transistor formed on an SOI substrate and a subsidiary transistor provided between a body node and a drain node of the MOS transistor and sharing a gate electrode with the MOS transistor, whereby the body potential of the MOS transistor is controlled by gate and drain potentials. Accumulated body charge in a non-conducting state in the semiconductor integrated circuit is extracted by a resistor formed between the body node and a source, whereby various phenomena caused by the floating body effect are eliminated. The threshold voltage of the MOS transistor can be made variable so as to follow a change in an input signal.