The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Nov. 26, 2002
Ken Yamaguchi, Fuchu, JP;
Yoshiaki Takemura, Sagamihara, JP;
Kenichi Osada, Kawasaki, JP;
Masatada Horiuchi, Koganei, JP;
Takashi Uchino, Southampton, GB;
Hitachi, Ltd., Tokyo, JP;
Abstract
A higher-performance short channel MOS transistor with enhanced resistance to soft errors caused by exposure to high-energy rays is realized. At the time of forming a deep source/drain diffusion layer region at high density, an intermediate region of a density higher than that of impurity of a semiconductor substrate is formed between the source/drain diffusion layer and the semiconductor substrate of a conduction type opposite to that of the source/drain diffusion layer. The intermediate region is formed with a diffusion window for forming the source/drain, an intermediate layer of uniform concentration and uniform width can be realized at low cost.