Higashimurayama, Japan

Masao Shinozaki

This inventor holds 22 USPTO granted patents, primarily in Semiconductor Technology. Top assignees: Renesas Technology Corp., Hitachi Ulsi Systems Co., Ltd., Renesas Electronics Corporation. Active years: 2002-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masao Shinozaki. Retrieved from https://idiyas.com/inventor/masao-shinozaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 63.6

Average Co-Inventor Count = 2.4

ph-index = 7

Forward Citations = 214(Granted Patents)


Location History:

  • Kodaira, JP (2008)
  • Higashimurayama, JP (2002 - 2011)
  • Tokyo, JP (2008 - 2012)
  • Kanagawa, JP (2012 - 2013)

Company Filing History:


Years Active: 2002-2013

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Areas of Expertise:
Semiconductor Device
Semiconductor Memory
Integrated Circuit
Storage Device
High Speed Memory
Clock Signal Generation
Data Fetching
Timing Margin
Manufacturing Method
Short Word Line Switching
22 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Masao Shinozaki

Introduction

Masao Shinozaki, an accomplished inventor based in Higashimurayama, Japan, holds an impressive 22 patents to his name. His contributions primarily focus on advancements in semiconductor technology, enhancing both performance and efficiency in electronic devices.

Latest Patents

Among his notable inventions are two significant patents in semiconductor devices. The first patent addresses a technique for ensuring both a stable noise margin (SNM) and a write margin simultaneously in a semiconductor device utilizing static memory cells. This invention incorporates a memory cell array arranged in a matrix configuration and includes a temperature sensor circuit that monitors the semiconductor device's temperature. It intelligently adjusts the voltage supplied to the word line based on temperature readings during the reading or writing process to enhance reliability.

The second patent centers on the development of a high-speed semiconductor storage device that employs the Quad Data Rate (QDR) method. This innovative design features a memory cell array, dual buffers, and dedicated circuits for generating internal clock signals to minimize phase differences. This optimization contributes to shorter input setup and hold times, enabling higher clock frequencies and improving overall device performance.

Career Highlights

Masao Shinozaki has made a significant impact in the field of semiconductor technology through his work at renowned companies. Notably, he has held positions at Renesas Technology Corporation and Hitachi ULSI Systems Co., Ltd., where he focused on research and development in semiconductor devices. His career has been marked by a commitment to innovation, resulting in numerous patented technologies that continue to influence the industry.

Collaborations

Throughout his career, Shinozaki has collaborated with several notable experts in the field, including Takashi Akioka and Kinya Mitsumoto. These partnerships have fostered a rich exchange of ideas and innovations that have propelled advancements in semiconductor technology.

Conclusion

Masao Shinozaki's impressive portfolio of 22 patents exemplifies his dedication to innovation in semiconductor technology. His latest inventions not only push the boundaries of existing technology but also pave the way for future advancements in the field. With a solid career background and meaningful collaborations, Shinozaki remains a pivotal figure in driving the evolution of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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