The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Apr. 30, 2009
Applicant:
Masao Shinozaki, Tokyo, JP;
Inventor:
Masao Shinozaki, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
There is provided a technique for ensuring both an SNM and a write margin simultaneously in a semiconductor device having static memory cells. A semiconductor device has a plurality of static memory cells. The semiconductor device includes a memory cell array having the static memory cells arranged in a matrix, a temperature sensor circuit for sensing a temperature in the semiconductor device, and a word driver for controlling a voltage supplied to a word line of the memory cell array based on an output of the temperature sensor circuit at the time of writing to or reading from a memory cell.