Hamakita, Japan

Masao Kosugi

This inventor holds 2 USPTO granted patents. Top assignee: Nippon Gakki Seizo Kabushiki Kaisha. Active years: 1978-1979.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masao Kosugi. Retrieved from https://idiyas.com/inventor/masao-kosugi-31cnzj7s

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 2

Forward Citations = 27(Granted Patents)


Location History:

  • Hamakita, JP (1978)
  • Hamamatsu, JP (1979)

Company Filing History:


Years Active: 1978-1979

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2 patents (USPTO):Explore Patents

Title: The Innovations of Masao Kosugi

Introduction

Masao Kosugi is a notable inventor based in Hamakita, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to manufacturing and design.

Latest Patents

One of his latest patents is a process for manufacturing semiconductor devices. This process involves a common semiconductor wafer constituted by a PN-lamination, where a number of semiconductor device units are formed. Recessed grooves are etched into the wafer at sites corresponding to the boundaries of adjacent semiconductor device units. To protect the PN-junctions exposed on the etched grooves, these surfaces are coated with a thermo-setting resin. The semiconductor wafer is then severed at the recessed grooves into individual chips of semiconductor devices.

Another significant patent by Kosugi is for a field effect transistor having unsaturated characteristics. This invention comprises a plurality of current channels made from a semiconductor material with an impurity concentration between 1 × 10^13 to 1 × 10^15 atoms/c.c. Each current channel has a minimum diameter between 2 and 15 μm, allowing the depletion layer from the gate junction to nearly close the current channel at zero gate bias. This junction type field effect transistor provides unsaturated and well-aligned parallel characteristic curves, reducing power loss compared to conventional unsaturated type vertical field effect transistors.

Career Highlights

Masao Kosugi is associated with Nippon Gakki Seizo Kabushiki Kaisha, where he has been able to apply his innovative ideas in semiconductor technology. His work has contributed to advancements in the efficiency and performance of semiconductor devices.

Collaborations

He has collaborated with notable coworkers, including Takeshi Matsuyama and Takashi Yoshida, who have also contributed to the field of semiconductor technology.

Conclusion

Masao Kosugi's contributions to semiconductor technology through his patents reflect his innovative spirit and dedication to advancing the field. His work continues to influence the development of efficient semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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