The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 1978
Filed:
May. 27, 1977
Applicant:
Inventors:
Assignee:
Nippon Gakki Seizo Kabushiki Kaisha, Hamamatsu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 55 ; 357 56 ;
Abstract
A field effect transistor having unsaturated characteristics comprising a plurality of current channels consisting of a semiconductor material of an impurity concentration between 1 .times. 10.sup.13 to 1 .times. 10.sup.15 atoms/c.c., each current channel having a minimum diameter between 2 and 15 .mu.m so that the depletion layer growing from the gate junction nearly but not perfectly closes the current channel at zero gate bias. This junction type field effect transistor provides unsaturated and well aligned parallel characteristic curves and reduces power loss as compared to conventional unsaturated type vertical field effect transistors.