Osaka, Japan

Masao Hamasaki

USPTO Granted Patents = 3 

Average Co-Inventor Count = 5.1

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021

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3 patents (USPTO):Explore Patents

Title: Masao Hamasaki: Innovator in Semiconductor Technology

Introduction

Masao Hamasaki is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on the development of advanced semiconductor devices that enhance performance and efficiency.

Latest Patents

Hamasaki's latest patents include innovative designs for semiconductor devices. One of his patents describes a semiconductor device that features a semiconductor layer with principal surfaces, a metal layer that is thicker than the semiconductor layer, and transistors that include a source electrode and a gate electrode. This design aims to improve the functionality and reliability of semiconductor devices. Another patent outlines a semiconductor device that incorporates multiple metal layers and transistors, optimizing the common drain region for enhanced performance. The specifications detail precise measurements and ratios that contribute to the device's efficiency.

Career Highlights

Throughout his career, Masao Hamasaki has worked with notable companies in the semiconductor industry. He has been associated with Panasonic Semiconductor Solutions Co., Ltd. and Nuvoton Technology Corporation Japan. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Hamasaki has collaborated with esteemed colleagues in his field, including Chie Fujioka and Hiroshi Yoshida. These partnerships have fostered a creative environment that has led to the development of advanced semiconductor solutions.

Conclusion

Masao Hamasaki's contributions to semiconductor technology are noteworthy, with a focus on innovative designs that enhance device performance. His patents reflect a deep understanding of the complexities involved in semiconductor development. His work continues to influence the industry and pave the way for future advancements.

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