The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Dec. 17, 2020
Applicant:

Panasonic Semiconductor Solutions Co., Ltd., Kyoto, JP;

Inventors:

Chie Fujioka, Kyoto, JP;

Hiroshi Yoshida, Niigata, JP;

Yoshihiro Matsushima, Shiga, JP;

Hideki Mizuhara, Kyoto, JP;

Masao Hamasaki, Osaka, JP;

Mitsuaki Sakamoto, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 23/538 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 23/5386 (2013.01); H01L 27/088 (2013.01);
Abstract

A semiconductor device includes: a semiconductor layer that includes principal surfaces; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, is thicker than the semiconductor layer, and comprises a first metal material; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, and comprises a metal material having a Young's modulus greater than that of the first metal material; and transistors. The transistor includes a source electrode and a gate electrode on a side facing the principal surface. The transistor includes a source electrode and a gate electrode on a side facing the principal surface.


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