The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Jan. 17, 2019
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Masao Hamasaki, Osaka, JP;
Masaaki Hirako, Shiga, JP;
Ryosuke Okawa, Nara, JP;
Ryou Kato, Osaka, JP;
PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD., Kyoto, JP;
Abstract
A semiconductor device includes: a semiconductor (10 μm≤t≤30 μm); a metal layer (30 μm≤t≤60 μm) comprising Ag; a metal layer (10 μm≤t≤35 μm) comprising Ni; and transistors. The transistors include a source electrode and a gate electrode on the semiconductor layer. The metal layer functions as a common drain region for the transistors. The ratio of the lengths of the longer side and the shorter side of the semiconductor layer is at most 1.73. The ratio of the surface area and the perimeter length of each electrode included in the source electrode is at most 0.127. The cumulative surface area of the source electrode and the gate electrode is at most 2.61 mm. The length of the shorter side of the source electrode is at most 0.3 mm, and 702<2.33×t+10.5×t+8.90×t<943 is satisfied.