The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
May. 30, 2025
Nuvoton Technology Corporation Japan, Kyoto, JP;
Mitsuaki Sakamoto, Kyoto, JP;
Masao Hamasaki, Osaka, JP;
Ryouichi Ajimoto, Kyoto, JP;
Hiroshi Yoshida, Toyama, JP;
Takashi Yui, Shiga, JP;
NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto, JP;
Abstract
A semiconductor device includes: a semiconductor layer; a vertical metal-oxide semiconductor (MOS) transistor; a protective film; a first wiring electrode connected to a source electrode of the vertical MOS transistor; and a second wiring electrode connected to a gate electrode of the vertical MOS transistor. A first perimeter structure is provided in a perimeter portion of the first wiring electrode in the plan view of the semiconductor layer, the first perimeter structure protruding upward of the semiconductor device and including the source electrode, the protective film, and the first wiring electrode that are stacked in stated order. A second perimeter structure is provided in a perimeter portion of the second wiring electrode in the plan view of the semiconductor layer, the second perimeter structure protruding upward of the semiconductor device and including the gate electrode, the protective film, and the second wiring electrode that are stacked in stated order.