Masanobu Hiramoto

Title: Masanobu Hiramoto: Innovator in Single Crystal SiC Technology

Introduction

Masanobu Hiramoto is a distinguished inventor based in Sanda, Japan. He has made significant contributions to the field of semiconductor materials, particularly in the development of single crystal silicon carbide (SiC). With a total of 4 patents to his name, Hiramoto's work has paved the way for advancements in high-quality crystal production.

Latest Patents

Hiramoto's latest patents focus on innovative methods for producing single crystal SiC. One of his notable inventions is a material for raising single crystal SiC and a method of preparing it. This invention involves a complex formed by closely stacking a single crystal α-SiC base material and a polycrystalline plate, which is produced using the chemical vapor deposition (CVD) method. The process includes heat treatment at temperatures of 2,200°C or higher, under saturated SiC vapor pressure, allowing for the transformation of polycrystalline members into a single crystal structure. This method effectively prevents crystal defects and distortion, resulting in high-quality single crystal SiC.

Another significant patent by Hiramoto describes the production of single crystal SiC through a process involving two complexes, each with a polycrystalline film grown on a single crystal α-SiC substrate. The complexes undergo heat treatment at temperatures of 2,000°C or higher, leading to the recrystallization of the polycrystalline films and the growth of a single crystal integrated with the substrate. This innovative approach allows for the production of large-size single crystal SiC with minimal impurities and defects.

Career Highlights

Throughout his career, Hiramoto has worked with notable companies, including Nippon Pillar Packing Co., Ltd. and Nissin Electric Co., Ltd. His expertise in semiconductor materials has made him a valuable asset in the industry.

Collaborations

Hiramoto has collaborated with various professionals in his field, including Kichiya Tanino, to further enhance his research and development efforts.

Conclusion

Masanobu Hiramoto's contributions to the field of single crystal SiC technology have been instrumental in advancing semiconductor materials. His innovative patents and career achievements reflect his dedication to improving the quality and efficiency of crystal production.