The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Nov. 06, 1998
Kichiya Tanino, Sanda, JP;
Masanobu Hiramoto, Sanda, JP;
Nippon Pillar Packing Co., Ltd., Osaka, JP;
Abstract
The single crystal SiC according to the present invention is produced in the following manner. Two complexes M in each of which a polycrystalline film,of &bgr;-SiC (or &agr;-SiC) is grown on the surface of a single crystal &agr;-SiC substrate,by thermochemical deposition, and the surface,of the polycrystalline film,is ground so that the smoothness has a surface roughness of 200 angstroms RMS or smaller, preferably 100 to 50 angstroms RMS are subjected to a heat treatment under a state where the complexes are closely fixed to each other via their ground surfaces,at a temperature of 2,000° C. or higher and in an atmosphere of a saturated SiC vapor pressure, whereby the polycrystalline films,of the complexes M are recrystallized to grow a single crystal which is integrated with the single crystal &agr;-SiC substrates,Large-size single crystal SiC in which impurities, micropipe defects, and the like do not remain, and which has high quality can be produced with high productivity.