Nippon Pillar Packing Co., Ltd.

Nissin Electric Co., Ltd.

Masanobu Hiramoto

Kichiya Tanino

According to the invention, a complex (M or M&prime;) formed by stacking in a closely contacted state a single crystal &agr;-SiC base material ( ) and a polycrystalline plate ( ) which is produced into a plate-like shape by the CVD method with interposing an intermediate layer ( or &prime;) containing Si and O as fundamental components, such as silicon rubber between opposing faces of the two members ( ) and ( ) in a laminated manner is heat-treated at a temperature of 2,200&deg; C. or higher, and under a saturated SiC vapor pressure, thereby causing polycrystal members of the polycrystalline plate ( ) to be transformed in a same direction as single crystal of the single crystal &agr;-SiC base material ( ) to integrally grow single crystal. Therefore, single crystal SiC of a high quality in which crystal defects and distortion are prevented from occurring and micropipe defects hardly occur can be produced easily and efficiently.

Material for raising single crystal SiC and method of preparing single crystal SiC

The single crystal SiC according to the present invention is produced in the following manner. Two complexes M in each of which a polycrystalline film,of &bgr;-SiC (or &agr;-SiC) is grown on the surface of a single crystal &agr;-SiC substrate,by thermochemical deposition, and the surface,of the polycrystalline film,is ground so that the smoothness has a surface roughness of 200 angstroms RMS or smaller, preferably 100 to 50 angstroms RMS are subjected to a heat treatment under a state where the complexes are closely fixed to each other via their ground surfaces,at a temperature of 2,000&deg; C. or higher and in an atmosphere of a saturated SiC vapor pressure, whereby the polycrystalline films,of the complexes M are recrystallized to grow a single crystal which is integrated with the single crystal &agr;-SiC substrates,Large-size single crystal SiC in which impurities, micropipe defects, and the like do not remain, and which has high quality can be produced with high productivity.

Single crystal SiC and a method of producing the same

In single crystal SiC according to the present invention, a single crystal &agr;-SiC substrate and a polycrystalline &bgr;-SiC plate are laminated to each other for fixation, the single crystal &agr;-Sic substrate and the polycrystalline &bgr;-SiC plate are subjected to heat treatment under an inert gas atmosphere and a saturated SiC vapor atmosphere, whereby the single crystallization owing to solid-phase transformation of the polycrystalline &bgr;-SiC plate and a progress of the single crystallization to a surface direction wherein a contact point is regarded as a starting point make a whole surface of layer of the polycrystalline &bgr;-SiC plate grow efficiently into a single crystal integrated with the single crystal &agr;-SiC substrate, whereby it is possible to produce single crystal SiC having high quality with high productivity, which is substantially free from lattice defects and micropipe defects.

Single crystal SIC and method of producing the same

The surface 1a of a single crystal .alpha.-SiC substrate 1 is adjusted so as to have a surface roughness equal to or lower than 2,000 angstroms RMS, and preferably equal to or lower than 1,000 angstroms RMS. On the surface 1a of the single crystal .alpha.-SiC substrate 1, a polycrystalline .alpha.-SiC film 2 is grown by thermal CVD to form a complex is placed in a porous carbon container and the carbon container is covered with .alpha.-SiC powder. The complex is subjected to a heat treatment at a temperature equal to or higher than a film growing temperature, i.e., in the range of 1,900 to 2,400.degree. C. in an argon gas flow, whereby single crystal .alpha.-SiC is integrally grown on the single crystal .alpha.-SiC substrate 1 by crystal growth and recrystallization of the polycrystalline .alpha.-SiC film 2. It is possible to stably and efficiently produce single crystal SiC of a large size which has a high quality and in which any crystal nucleus is not generated.

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Sanda, Japan

Masanobu Hiramoto