The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Mar. 20, 2001
Kichiya Tanino, Sanda, JP;
Masanobu Hiramoto, Sanda, JP;
Nissin Electric Co., Ltd., Kyoto, JP;
Abstract
According to the invention, a complex (M or M′) formed by stacking in a closely contacted state a single crystal &agr;-SiC base material ( ) and a polycrystalline plate ( ) which is produced into a plate-like shape by the CVD method with interposing an intermediate layer ( or ′) containing Si and O as fundamental components, such as silicon rubber between opposing faces of the two members ( ) and ( ) in a laminated manner is heat-treated at a temperature of 2,200° C. or higher, and under a saturated SiC vapor pressure, thereby causing polycrystal members of the polycrystalline plate ( ) to be transformed in a same direction as single crystal of the single crystal &agr;-SiC base material ( ) to integrally grow single crystal. Therefore, single crystal SiC of a high quality in which crystal defects and distortion are prevented from occurring and micropipe defects hardly occur can be produced easily and efficiently.