Toyama, Japan

Masanao Fukuda

This inventor holds 6 USPTO granted patents and 7 published patent applications. Top assignees: Hitachi-Kokusai Electric Inc., Kokusai Electric Corporation. Active years: 2014-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masanao Fukuda. Retrieved from https://idiyas.com/inventor/masanao-fukuda

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 66.7

Average Co-Inventor Count = 5.0

ph-index = 3

Forward Citations = 481(Granted Patents)


Company Filing History:


Years Active: 2014-2019

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6 patents (USPTO):Explore Patents

Title: Masanao Fukuda - Innovator in Semiconductor Processing

Introduction

Masanao Fukuda is a notable inventor based in Toyama-shi, Japan. He has made significant contributions to the field of semiconductor processing, focusing on methods that enhance the uniformity of thin films on substrates. His innovative approaches aim to improve the efficiency and effectiveness of semiconductor manufacturing processes.

Latest Patent Applications

Masanao Fukuda has filed several latest patent applications, including a semiconductor processing apparatus. This apparatus features a processing tube designed to house a substrate support member that accommodates multiple substrates stacked vertically. It includes a gas supply part with multiple openings, an exhaust part, and a gas rectifying plate that ensures uniform gas flow around the substrates. Additionally, he has developed a method for manufacturing semiconductor devices that controls the concentration of atomic oxygen at low temperatures, ensuring uniform thickness distribution of oxide films on the substrates.

Conclusion

Masanao Fukuda's work in semiconductor processing showcases his commitment to innovation in the field. His latest patent applications reflect his dedication to improving manufacturing techniques and enhancing the quality of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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