The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Feb. 27, 2012
Daisuke Hara, Toyama, JP;
Takeshi Itoh, Toyama, JP;
Masanao Fukuda, Toyama, JP;
Takatomo Yamaguchi, Toyama, JP;
Hiroaki Hiramatsu, Toyama, JP;
Shuhei Saido, Toyama, JP;
Takafumi Sasaki, Toyama, JP;
Daisuke Hara, Toyama, JP;
Takeshi Itoh, Toyama, JP;
Masanao Fukuda, Toyama, JP;
Takatomo Yamaguchi, Toyama, JP;
Hiroaki Hiramatsu, Toyama, JP;
Shuhei Saido, Toyama, JP;
Takafumi Sasaki, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile