Masaaki Nido

This inventor holds 17 USPTO granted patents, primarily in Gallium Nitride Semiconductors. Top assignees: Nec Corporation, Other. Active years: 1995-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaaki Nido. Retrieved from https://idiyas.com/inventor/masaaki-nido

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 17

% Patents Active = 94.1

Average Co-Inventor Count = 2.5

ph-index = 7

Forward Citations = 154(Granted Patents)

Location History:

Minato-ku, Tokyo, JP (2009)
Tokyo, JP (1995 - 2010)

Company Filing History:

16 out of 36,735

Nec Corporation

patents

1 out of 834,601

Other

patents

Years Active: 1995-2010

Loading Chart...

Areas of Expertise:

Optical Module

Nitride Semiconductor

Light-Emitting Device

Compound Semiconductor

Gallium Nitride

Photo-Luminescent Device

Crystal Growth

Heterostructure

Quantum Well Laser

Refractive Index Control

N-Type Semiconductor

P-Type Semiconductor

17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7684133 - Optical module (2010-03-23),

2. 7585117 - Optical module (2009-09-08),

3. 7282745 - Nitride based semiconductor light-emitting device (2007-10-16),

4. 6977952 - Nitride based semiconductor light-emitting device (2005-12-20),

5. 6855959 - Nitride based semiconductor photo-luminescent device (2005-02-15),

6. 6635905 - Gallium nitride based compound semiconductor light-emitting device (2003-10-21),

7. 6423562 - Contact electrode for n-type gallium nitride-based compound semiconductor and method for forming the same (2002-07-23),

8. 6420198 - Gallium nitride based compound semiconductor laser and method of forming the same (2002-07-16),

9. 6329716 - Contact electrode for N-type gallium nitride-based compound semiconductor and method for forming the same (2001-12-11),

10. 6201823 - Gallium nitride based compound semiconductor laser and method of forming the same (2001-03-13),

11. 6096130 - Method of crystal growth of a GaN layer over a GaAs substrate (2000-08-01),

12. 5902393 - Method for growing p-type gallium nitride based compound semiconductors (1999-05-11),

13. 5843227 - Crystal growth method for gallium nitride films (1998-12-01),

14. 5825053 - Heterostructure III-V nitride semiconductor device including InP (1998-10-20),

15. 5793054 - Gallium nitride type compound semiconductor light emitting element (1998-08-11),

Title: The Innovative Journey of Masaaki Nido

Introduction: Masaaki Nido, a pioneering inventor hailing from Tokyo, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Masaaki Nido's latest patents focus on advancements in artificial intelligence and robotics, showcasing his commitment to pushing the boundaries of technological possibilities.

Career Highlights: With a career spanning over two decades, Masaaki Nido has established himself as a leading figure in the tech industry, with a keen focus on developing cutting-edge solutions for complex challenges.

Collaborations: Throughout his career, Masaaki Nido has collaborated with top research institutions and leading tech companies to bring his inventions to life, fostering a culture of innovation and excellence.

Conclusion: Masaaki Nido's relentless pursuit of innovation and his passion for creating transformative technologies continue to inspire the next generation of inventors and shape the future of the tech industry.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]