The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 1998
Filed:
Jun. 13, 1996
Masaaki Nido, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A gallium nitride type compound semiconductor light emitting element, such as a semiconductor laser, a light emitting diode is constructed by forming an In.sub.0.06 Ga.sub.0.94 N buffer layer, an n-type In.sub.0.06 Ga.sub.0.94 N clad layer, an n-type In.sub.0.06 Al.sub.0.15 Ga.sub.0.79 N clad layer, an undoped GaN active layer having layer thickness of 50 nm, a p-type In.sub.0.06 Al.sub.0.15 Ga.sub.0.79 N clad layer and a p-type In.sub.0.06 Ga.sub.0.94 N cap layer on a (0001) azimuth sapphire substrate. A p-side electrode is formed on the p-type In.sub.0.06 Ga.sub.0.94 N cap layer, and an n-side electrode is formed on the n-type In.sub.0.06 Ga.sub.0.94 N clad layer. In the construction set forth above, a greater thickness for the active layer is provided. Also, tensile strain is applied to the active layer. Light is taken out in parallel direction to the substrate. This threshold current of the semiconductor laser is lowered and light emitting efficiency of the light emitting diode is improved.