The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2007
Filed:
Sep. 22, 2005
Applicants:
Atsushi Yamaguchi, Tokyo, JP;
Masaru Kuramoto, Tokyo, JP;
Masaaki Nido, Tokyo, JP;
Inventors:
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a semiconductor device having a semiconductor multi-layer structure which includes at least an active layer having at least a quantum well, and the active layer further including at least a luminescent layer of InAlGaN (0<x<1, 0≦y≦0.2), wherein a threshold mode gain of each of the at least quantum well is not more than 12 cm, and wherein a standard deviation of a microscopic fluctuation in a band gap energy of the at least luminescent layer is in the range of 75 meV to 200 meV.