The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 1999
Filed:
Jan. 17, 1997
Applicant:
Inventors:
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117-2 ; 117-3 ; 117 89 ; 117 93 ; 117105 ; 117952 ;
Abstract
Disclosed is a method of growing 4 gallium nitride-based crystal by vapor phase epitaxy, suitable for mass production, without the necessity of thermal processing after completion of the crystal growth. The temperature of the substrate crystal immediately after completion of the crystal growth is 700.degree. C. or higher, and cooling of the substrate crystal at 700.degree. C. or lower after completion of the crystal growth is performed in an atmosphere of a hydrogen-fee carrier gas.