Company Filing History:
Years Active: 2005-2007
Introduction
Mark R Richards, an inventive mind based in Tigard, Oregon, has made significant contributions to the field of memory technology with his patents at Intel Corporation. With a total of three patents to his name, Richards is recognized for his innovative approaches in enhancing memory arrays using ferroelectric polymer materials.
Latest Patents
Richards' latest patent, titled "Ferroelectric polymer memory with a thick interface layer," introduces a novel method for constructing memory arrays. This invention involves forming an insulating layer on a semiconductor substrate, followed by the creation of a first metal stack. This stack is etched to form the first metal lines. A unique polymeric layer, characterized by its rough surface formations, is then applied over these lines and the insulating layer. A second metal stack is added on top of this polymeric layer, featuring an interface layer that surpasses the heights of the roughness formations. This design allows for the formation of memory cells wherever a second metal line overlaps with a first metal line, showcasing Richards' inventive techniques in improving memory technology.
Career Highlights
Throughout his career, Mark R Richards has demonstrated a commitment to advancing the field of semiconductor technology. His work at Intel Corporation, one of the leading technology companies, underscores his influence and expertise in memory technology innovations. With three patents to his credit, Richards has positioned himself as a forward-thinking inventor committed to pushing the boundaries of what is possible in memory array construction.
Collaborations
Richards collaborates with notable colleagues, including Daniel C Diana and Hitesh Windlass. These partnerships reflect a collaborative spirit in the technological community, allowing for the sharing of ideas and strategies that contribute to cutting-edge innovations in memory technology.
Conclusion
In summary, Mark R Richards is an accomplished inventor whose work at Intel Corporation significantly influences the evolution of memory technologies. Through his innovative approaches, particularly in ferroelectric polymer memory, he continues to leave a lasting impact on the field. As he progresses in his career, his contributions are likely to inspire future advancements in semiconductor design and memory storage solutions.