Turku, Finland

Marjukka Tuominen

USPTO Granted Patents = 7 

 

 

Average Co-Inventor Count = 7.8

ph-index = 3

Forward Citations = 11(Granted Patents)


Location History:

  • Turku, FI (2016 - 2019)
  • Rasio, FI (2023)
  • Raisio, FI (2022 - 2024)

Company Filing History:


Years Active: 2016-2024

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7 patents (USPTO):Explore Patents

Title: Marjukka Tuominen: Innovator in Semiconductor Technology

Introduction

Marjukka Tuominen is a prominent inventor based in Turku, Finland. She has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. Her innovative work has advanced the understanding and manufacturing processes of semiconductor structures.

Latest Patents

Tuominen's latest patents include a method for forming a semiconductor structure that utilizes a silicon-on-insulator layer with crystalline silicon oxide as the insulator material. This method involves providing a crystalline silicon substrate in a vacuum chamber, heating it to an oxidation temperature, and supplying molecular oxygen to form a crystalline silicon oxide layer. Another notable patent describes a method for forming a foreign oxide or foreign nitride layer on a semiconductor substrate, which enhances the properties of the semiconductor material.

Career Highlights

Throughout her career, Marjukka Tuominen has worked with esteemed organizations such as Turku University and Comptek Solutions Oy. Her work in these institutions has allowed her to explore and develop innovative semiconductor technologies that have practical applications in various industries.

Collaborations

Tuominen has collaborated with notable colleagues, including Pekka Laukkanen and Marko Punkkinen. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in semiconductor research.

Conclusion

Marjukka Tuominen's contributions to semiconductor technology through her patents and collaborations highlight her role as a leading innovator in the field. Her work continues to influence the development of advanced semiconductor structures and processes.

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