The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Sep. 12, 2022
Turun Yliopisto, Turku, FI;
Pekka Laukkanen, Turku, FI;
Mikhail Kuzmin, St. Petersburg, RU;
Jaakko Mäkelä, Turku, FI;
Marjukka Tuominen, Raisio, FI;
Marko Punkkinen, Turku, FI;
Antti Lahti, Turku, FI;
Kalevi Kokko, Turku, FI;
Juha-Pekka Lehtiö, Turku, FI;
TURUN YLIOPISTO, Turku, FI;
Abstract
A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOas the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature Tin the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Pin the range of 1·10to 1·10mbar in the vacuum chamber, molecular oxygen Ointo the vacuum chamber with an oxygen dose Din the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.