The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Dec. 09, 2019
Turun Yliopisto, Turku, FI;
Mikhail Kuzmin, St. Petersburg, RU;
Pekka Laukkanen, Turku, FI;
Yasir Muhammad, Turku, FI;
Marjukka Tuominen, Rasio, FI;
Johnny Dahl, Turku, FI;
Veikko Tuominen, Turku, FI;
Jaakko Makela, Turku, FI;
Marko Punkkinen, Turku, FI;
Kalevi Kokko, Turku, FI;
TURUN YLIOPISTO, Turku, FI;
Abstract
A method for forming a foreign oxide or foreign nitride layer () on a substrate () of a semiconductor comprises providing a semiconductor substrate () having an oxidized or nitridized surface layer (), supplying a foreign element () on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer () at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer ().