Turku, Finland

Yasir Muhammad

This inventor holds 2 USPTO granted patents and 1 EPO patent. Top assignee: Turun Yliopisto. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasir Muhammad. Retrieved from https://idiyas.com/inventor/yasir-muhammad-4nn7wlwh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2023

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2 patents (USPTO):Explore Patents

Title: Yasir Muhammad: Innovator in Semiconductor Technology

Introduction

Yasir Muhammad is a notable inventor based in Turku, Finland. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to manufacturing processes.

Latest Patents

Yasir's latest patents focus on the manufacturing of foreign oxide or foreign nitride on semiconductors. The method involves forming a foreign oxide or foreign nitride layer on a semiconductor substrate. This process includes providing a semiconductor substrate with an oxidized or nitridized surface layer, supplying a foreign element on this surface layer, and maintaining the surface layer at an elevated temperature. This allows for the oxidation or nitridization of the foreign element by the oxygen or nitrogen present in the surface layer.

Career Highlights

Throughout his career, Yasir has worked with reputable organizations such as Turku University and Sisusemi Oy. His work in these institutions has allowed him to develop and refine his innovative techniques in semiconductor manufacturing.

Collaborations

Yasir has collaborated with esteemed colleagues, including Pekka Laukkanen and Marjukka Tuominen. These partnerships have contributed to his success and the advancement of his research.

Conclusion

Yasir Muhammad stands out as a prominent inventor in the semiconductor industry, with his patents reflecting his expertise and innovative spirit. His contributions continue to influence the field and inspire future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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