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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10256290 B1

PDFFull Text
Date of Patent:
Apr. 09, 2019

Filed:

Nov. 02, 2017

Method for oxidizing a substrate surface using oxygen

Applicant:

Comptek Solutions Oy, Lieto, FI;

Inventors:

Pekka Laukkanen, Turku, FI;

Jouko Lang, Lieto, FI;

Marko Punkkinen, Turku, FI;

Marjukka Tuominen, Turku, FI;

Veikko Tuominen, Turku, FI;

Johnny Dahl, Turku, FI;

Juhani Vayrynen, Kaarina, FI;

Assignee:

Comptek Solutions Oy, Lieto, FI;

Attorney:

James C. Lydon

Primary Examiner:

Lex H Malsawma

Assistant Examiner:

Eric W Jones

Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/316 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 21/324 (2006.01); H01L 29/201 (2006.01);
U.S. Cl.
CPC ...
H01L 29/02 (2013.01); H01L 21/02046 (2013.01); H01L 21/02109 (2013.01); H01L 21/02172 (2013.01); H01L 21/02241 (2013.01); H01L 21/28264 (2013.01); H01L 21/31666 (2013.01); H01L 21/3245 (2013.01); H01L 29/1054 (2013.01); H01L 29/20 (2013.01); H01L 29/201 (2013.01); H01L 29/205 (2013.01);
Abstract

A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

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