Marie C Flanigan

Title: Marie C Flanigan: Innovator in Plasma Etching Technology

Introduction

Marie C Flanigan is a prominent inventor based in Lockport, NY (US). She has made significant contributions to the field of plasma etching technology, holding a total of 3 patents. Her work has been instrumental in advancing processes used in integrated circuit manufacturing.

Latest Patents

One of her latest patents is the SF6/nitriding gas/oxidizer plasma etch system. This invention discloses a gaseous mixture of SF6, a nitriding gas component, and an oxidizer gas component as an effective SiO2 etchant. The enhanced selectivity for SiO2 over silicon or polysilicon is marked improved by adding an oxidizing gas to the SF6 nitriding gas plasma etchant. The optional addition of an inert diluent gas did not substantially change these results. Another notable patent is the boron trifluoride system for plasma etching of silicon dioxide. This patent describes BF3 based mixtures for selectively etching thin layers of silicon dioxide over silicon. The process reveals that when trace amounts of formaldehyde are added to the etch system, the rate on oxide increases markedly, while the effect on silicon is not substantial. Again, the optional addition of an inert diluent gas did not substantially change these results.

Career Highlights

Marie C Flanigan is associated with Allied Corporation, where she continues to innovate in her field. Her work has garnered attention for its practical applications in the semiconductor industry.

Collaborations

Throughout her career, she has collaborated with notable coworkers such as Stephen M Bobbio and Kenneth M Thrun. Their combined expertise has contributed to the success of various projects and patents.

Conclusion

Marie C Flanigan's contributions to plasma etching technology have made her a key figure in the field. Her innovative patents and collaborations highlight her commitment to advancing technology in integrated circuit manufacturing.