The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 1986
Filed:
May. 09, 1985
Applicant:
Inventors:
Marie C Flanigan, Lockport, NY (US);
Stephen M Bobbio, Hamburg, NY (US);
Robert F Aycock, Clarence, NY (US);
Ralph L DePrenda, Amherst, NY (US);
Kenneth M Thrun, Buffalo, NY (US);
Assignee:
Allied Corporation, Morris Township, Morris County, NJ (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C / ; C23C / ;
U.S. Cl.
CPC ...
2041 / ; 156643 ; 156646 ; 156657 ; 156662 ; 2041 / ; 252 791 ; 252372 ;
Abstract
BF.sub.3 based mixtures for selectively etching thin layers of silicon dioxide over silicon for use in the plasma etch process for integrated circuits manufacture is disclosed. In the process, when trace amounts of formaldehyde are added to the etch system the rate on oxide inceases markedly. The effect on the silicon is not substantial. The optional addition of an inert diluent gas did not substantially change these results.