Hsinchu, Taiwan

Mao-Song Tseng


Average Co-Inventor Count = 4.0

ph-index = 6

Forward Citations = 82(Granted Patents)


Company Filing History:


Years Active: 1999-2015

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17 patents (USPTO):Explore Patents

Title: Mao-Song Tseng: Innovator in Power Semiconductors

Introduction

Mao-Song Tseng is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of power semiconductors, holding a total of 17 patents. His work focuses on improving the efficiency and manufacturing processes of semiconductor devices.

Latest Patents

One of Tseng's latest patents is titled "Power semiconductor and manufacturing method thereof." This invention includes a semiconductor substrate, a metal oxide semiconductor layer, an N-type buffer layer, and a P-type injection layer. The design allows for adjustable ion concentration, enhancing electron hole injection efficiency and simplifying the fabrication process. Another notable patent is the "Method for fabricating trench metal-oxide-semiconductor field effect transistor." This method outlines a series of steps to create a trench structure and form a conductive metal layer, optimizing the manufacturing of field effect transistors.

Career Highlights

Throughout his career, Tseng has worked with notable companies such as Mosel Vitelic Corporation and Mosel Vitelec, Inc. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Tseng has collaborated with several professionals in the field, including Chien-Ping Chang and Chiao-Shun Chuang. These partnerships have fostered advancements in semiconductor research and development.

Conclusion

Mao-Song Tseng's contributions to power semiconductor technology are noteworthy, with a focus on enhancing efficiency and reducing manufacturing costs. His innovative patents and collaborations reflect his commitment to advancing the field.

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