The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2007

Filed:

Jan. 14, 2005
Applicants:

Hsin-huang Hsieh, Hsinchu, TW;

Chien-ping Chang, Hsinchu, TW;

Mao-song Tseng, Hsinchu, TW;

Tien-min Yuan, Hsinchu, TW;

Inventors:

Hsin-Huang Hsieh, Hsinchu, TW;

Chien-Ping Chang, Hsinchu, TW;

Mao-Song Tseng, Hsinchu, TW;

Tien-Min Yuan, Hsinchu, TW;

Assignee:

Mosel Vitelic, Inc., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a manufacturing process and the structure of an integrated circuit. In one embodiment, one polysilicon layer deposition and one polysilicon layer etching are used to form the gate of a trench device and the polysilicon layer of a planar device simultaneously. The present invention not only has overcome the problem of the electric leakage, but also has the advantages of withstanding a higher voltage, reducing the relevant cost and increasing the yields. The present invention possesses the outstanding technical features in the field of the power device.


Find Patent Forward Citations

Hsieh, Hsin-Huang. (2007). Manufacturing process and structure of integrated circuit (U.S. Patent No. 7205196). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7205196

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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