The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Aug. 23, 2013
Mosel Vitalec Inc., Hsinchu, TW;
Chien-Ping Chang, Hsinchu, TW;
Chien-Chung Chu, Hsinchu, TW;
I-Hsien Tang, Hsinchu, TW;
Chon-Shin Jou, Hsinchu, TW;
Mao-Song Tseng, Hsinchu, TW;
Shin-Chi Lai, Hsinchu, TW;
MOSEL VITALEC INC., Hsinchu, TW;
Abstract
A power semiconductor includes a semiconductor substrate, a metal oxide semiconductor layer, a N-type buffer layer and a P-type injection layer. The semiconductor substrate has a first surface and a second surface. The metal oxide semiconductor layer is formed on the first surface for defining a N-type drift layer of the semiconductor substrate. The N-type buffer layer is formed on the second surface through ion implanting, and the P-type injection layer is formed on the N-type buffer layer through ion implanting. By utilizing the semiconductor substrate having drift layer and forming the N-type buffer layer and the P-type injection layer on the second surface of the semiconductor substrate through ion implanting, the ion concentration is adjustable. As a result, the electron hole injection efficiency and the width of depletion region are easily adjusted, the fabricating processes are simplified, and the fabricating time and cost are reduced.