I-Hsien Tang

Title: I-Hsien Tang: Innovator in Power Semiconductor Technology

Introduction

I-Hsien Tang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of power semiconductors, showcasing his expertise through innovative patents. His work focuses on enhancing the efficiency and cost-effectiveness of semiconductor manufacturing processes.

Latest Patents

I-Hsien Tang holds a patent for a power semiconductor and its manufacturing method. This invention includes a semiconductor substrate, a metal oxide semiconductor layer, an N-type buffer layer, and a P-type injection layer. The semiconductor substrate features a first surface and a second surface. The metal oxide semiconductor layer is formed on the first surface to define an N-type drift layer of the semiconductor substrate. The N-type buffer layer is created on the second surface through ion implantation, while the P-type injection layer is also formed on the N-type buffer layer through ion implantation. This innovative approach allows for adjustable ion concentration, improving electron hole injection efficiency and simplifying the fabrication process, ultimately reducing time and costs.

Career Highlights

I-Hsien Tang is associated with Mosel Vitalec Inc., where he applies his knowledge and skills in semiconductor technology. His work has been instrumental in advancing the capabilities of power semiconductors, making them more efficient and cost-effective for various applications.

Collaborations

I-Hsien Tang has collaborated with notable colleagues, including Chien-Ping Chang and Chien-Chung Chu. These partnerships have contributed to the development of innovative solutions in the semiconductor industry.

Conclusion

I-Hsien Tang's contributions to power semiconductor technology highlight his role as an influential inventor. His patent reflects a commitment to innovation and efficiency in semiconductor manufacturing. His work continues to impact the industry positively.