Allen, TX, United States of America

Mansour Fardad

This inventor holds 4 USPTO granted patents. Top assignee: Micron Technology Incorporated. Active years: 2001-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mansour Fardad. Retrieved from https://idiyas.com/inventor/mansour-fardad

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 12(Granted Patents)


Location History:

  • Rowlett, TX (US) (2001)
  • Allen, TX (US) (2015 - 2021)

Company Filing History:


Years Active: 2001-2021

Loading Chart...
4 patents (USPTO):Explore Patents

Title: **Mansour Fardad: Innovator in Memory Array Technologies**

Introduction

Mansour Fardad, a talented inventor based in Allen, Texas, has made significant contributions to the field of memory technology. With a total of four patents to his name, he has been instrumental in developing innovative solutions that enhance the performance of dynamic random-access memory (DRAM) systems.

Latest Patents

Fardad’s latest patents include cutting-edge innovations such as "Peripheral logic circuits under DRAM memory arrays". This invention presents methods and related apparatuses for positioning peripheral circuits beneath DRAM memory arrays to optimize their operation, demonstrating foresight in memory technology design. Another notable patent involves "Apparatuses including a memory array with separate global read and write lines and/or sense amplifier region column select lines". This invention describes an apparatus with distinct memory sections, enhancing the efficiency of memory operations through improved circuit configurations.

Career Highlights

Mansour Fardad works at Micron Technology Incorporated, a leading company in memory and storage solutions. His role involves researching and developing advanced memory technologies, leveraging his expertise to contribute to the company’s innovative capabilities. Over the years, his work has significantly influenced the landscape of DRAM technologies, setting benchmarks for future developments.

Collaborations

In his endeavors, Fardad collaborates with skilled professionals such as Harish Naga Venkata and John Frederic Schreck, showcasing the importance of teamwork in driving innovation. These collaborations have led to the development of new methodologies and products that further advance the field of memory technology.

Conclusion

Mansour Fardad's inventive spirit and his contributions to memory array technologies underscore the critical role of inventors in shaping the future of computing. With his ongoing work at Micron Technology Incorporated and a solid portfolio of patents, Fardad continues to impact the industry, inspiring the next generation of innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…